參數(shù)資料
型號(hào): IRGS30B60K
廠商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR
中文描述: 絕緣柵雙極晶體管
文件頁(yè)數(shù): 11/13頁(yè)
文件大小: 328K
代理商: IRGS30B60K
IRGB/S/SL30B60K
www.irf.com
11
Dimensions are shown in millimeters (inches)
F530S
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
相關(guān)PDF資料
PDF描述
IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR
IRGS30B60 LCD Display Panel; No. of Digits/Alpha:320; Display Technology:LCD; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No
IRGB4045DPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB4055PBF Advanced Trench IGBT Technology
IRGB4059DPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRGS30B60KPBF 功能描述:IGBT 晶體管 600V ULTRAFAST 10-30 KHZ IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGS30B60KPBF 制造商:International Rectifier 功能描述:TRANSISTOR
IRGS30B60KTRRP 功能描述:IGBT 模塊 600V 30AD2PAK RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
IRGS4045DPBF 功能描述:IGBT 晶體管 IR IGBT 600V 6A, COPAK-D2PAK RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGS4045DPDF 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH UL TRAFAST SOFT RECOVERY DIODE