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參數(shù)資料
| 型號： | IRGPF50F |
| 廠商： | International Rectifier |
| 英文描述： | Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管) |
| 中文描述： | 絕緣門雙極晶體管（IGBTs）（快速絕緣柵型雙極型晶體管） |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 110K |
| 代理商： | IRGPF50F |
C-271
IRGPF50F
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Case Temperature
0
1000
2000
3000
4000
5000
1
10
100
C
V , Collector-to-Emitter Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
ies
C
res
C
oes
0
4
8
12
16
20
0
20
Q , Total Gate Charge (nC)
40
60
80
100
G
V
V = 400V
I = 28A
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
4.2
4.4
0
10
20
30
40
50
60
T
R , Gate Resistance ( )
W
V = 720V
V = 15V
T = 25°C
I = 28A
0.1
1
10
100
-60
-40
-20
T , Case Temperature (°C)
0
20
40
60
80
100
120
140
160
T
R = 5
V = 15V
V = 720V
I = 56A
I = 28A
I = 14A
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