參數(shù)資料
型號(hào): IRGPC30KD2
廠商: International Rectifier
英文描述: Insulated Gate Bipolar Transistors (IGBTs) with Ultrafast Soft Recovery Diode(帶超快軟恢復(fù)二極管的絕緣柵雙極型晶體管)
中文描述: 絕緣門(mén)雙極晶體管(IGBTs)的超快軟恢復(fù)二極管(帶超快軟恢復(fù)二極管的絕緣柵雙極型晶體管)
文件頁(yè)數(shù): 4/9頁(yè)
文件大小: 146K
代理商: IRGPC30KD2
Fig. 5
- Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4
- Maximum Collector Current vs.
Case Temperature
IRGPC30KD2
Fig. 6
- Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
0
5
10
15
20
25
25
50
T , Case Temperature (°C)
75
100
125
150
M
V = 15V
A
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-60
-40
-20
T , Case Temperature (°C)
0
20
40
60
80
100 120 140 160
C
V
V = 15V
80μs PULSE WIDTH
A
I = 28A
I = 14A
I = 7.0A
0.01
0.00001
0.1
1
10
0.0001
0.001
t , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
t
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
T
P
t
2
1
t
DM
Notes:
1. Duty factor D = t1
2
2. Peak J
DM
thJC
C
相關(guān)PDF資料
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