參數(shù)資料
型號(hào)： IRGP4065DPBF
廠商： International Rectifier
英文描述： PDP TRENCH IGBT
中文描述： 等離子溝道IGBT
文件頁數(shù)： 2/7頁
文件大?。?/td> 354K
代理商： IRGP4065DPBF
2
www.irf.com
Half sine wave with duty cycle = 0.25, ton=1μsec.
R
θ
is measured at
Pulse width
≤
400μs; duty cycle
≤
2%.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
CES
Collector-to-Emitter Breakdown Voltage
Β
V
CES
/
T
J
Breakdown Voltage Temp. Coefficient
Min.
300
–––
–––
–––
–––
–––
–––
2.6
–––
–––
–––
–––
–––
–––
–––
–––
—
—
—
—
—
—
—
—
100
Typ.
–––
0.23
1.20
1.35
1.75
2.35
2.00
–––
-11
2.0
50
–––
–––
26
62
20
30
26
170
160
30
28
250
310
–––
Max. Units
–––
–––
1.40
–––
2.10
–––
–––
5.0
–––
25
–––
100
-100
–––
–––
–––
—
—
—
—
—
—
—
—
–––
V
V/°C
V
V
GE(th)
V
GE(th)
/
T
J
I
CES
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
V
mV/°C
μA
I
GES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Shoot Through Blocking Time
nA
g
fe
Q
g
Q
gc
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
st
S
nC
I
C
= 25A, V
CC
= 180V
ns
R
G
= 10
, L=200μH, L
S
= 150nH
T
J
= 25°C
I
C
= 25A, V
CC
= 180V
ns
R
G
= 10
, L=200μH, L
S
= 150nH
T
J
= 150°C
ns
E
PULSE
Energy per Pulse
μJ
C
iss
C
oss
C
rss
L
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Collector Inductance
–––
–––
–––
–––
2200
110
55
5.0
–––
–––
–––
–––
pF
Between lead,
6mm (0.25in.)
from package
and center of die contact
nH
L
E
Internal Emitter Inductance
–––
13
–––
Diode Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
I
F(AV)
Average Forward Current at
T
C
=155°C
I
FSM
Non Repetitive Peak Surge Current
V
F
Forward Voltage
Min.
Typ.
Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
0.83
–––
27
40
30
106
2.2
5.3
100
1.25
1.0
35
–––
–––
–––
–––
–––
–––
A
V
T
J
= 155°C, PW = 6.0ms half sine wave
I
F
= 8A
I
F
= 8A, T
J
= 125°C
I
F
= 1A, di/dt = -50A/μs, V
R
=30V
t
rr
Reverse Recovery Time
ns
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
= 8A
di/dt = 200A/μs
V
R
= 200V
Q
rr
Reverse Recovery Charge
nC
I
rr
Peak Recovery Current
A
Static Collector-to-Emitter Voltage
V
CE(on)
V
GE
= 15V, I
CE
= 70A, T
J
= 150°C
V
CE
= V
GE
, I
CE
= 500μA
–––
875
–––
V
CE
= 300V, V
GE
= 0V
V
CE
= 300V, V
GE
= 0V, T
J
= 150°C
V
GE
= 30V
V
GE
= -30V
–––
975
–––
V
CE
= 25V, I
CE
= 25A
V
CE
= 200V, I
C
= 25A, V
GE
= 15V
V
CC
= 240V, V
GE
= 15V, R
G
= 5.1
L = 220nH, C= 0.40μF, V
GE
= 15V
V
CC
= 240V, R
G
= 5.1
,
T
J
= 25°C
L = 220nH, C= 0.40μF, V
GE
= 15V
V
CC
= 240V, R
G
= 5.1
,
T
J
= 100°C
V
GE
= 0V
V
CE
= 30V
= 1.0MHz, See Fig.13
Conditions
V
GE
= 0V, I
CE
= 1 mA
Reference to 25°C, I
CE
= 1mA
V
GE
= 15V, I
CE
= 25A
V
GE
= 15V, I
CE
= 40A
V
GE
= 15V, I
CE
= 120A
V
GE
= 15V, I
CE
= 70A
Conditions
–––
–––
8.0
A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRGP4065PBF 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 300V 70A 3PIN TO-247AC - Bulk
IRGP4066D-EPBF 功能描述:IGBT 晶體管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGP4066D-EPBF 制造商:International Rectifier 功能描述:TUBE / 600V UltraFast Copack Trench IGBT
IRGP4066DPBF 功能描述:IGBT 晶體管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGP4066-EPBF 功能描述:IGBT 晶體管 600V Low VCEon Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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