參數(shù)資料
型號(hào)： IRGP30B120KD-E
廠商： International Rectifier
英文描述： Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode(帶超快軟恢復(fù)的絕緣柵雙極型晶體管,應(yīng)用于電機(jī)控制)
中文描述： 絕緣柵雙極晶體管的超快軟恢復(fù)二極管（帶超快軟恢復(fù)的絕緣柵雙極型晶體管，應(yīng)用于電機(jī)控制）
文件頁數(shù)： 2/12頁
文件大?。?/td> 132K
代理商： IRGP30B120KD-E
IRGP30B120KD-E
2
www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
Tj
Temperature Coeff. of Breakdown Voltage
Min.
1200
Typ.
Max. Units
Conditions
Fig.
V
V
GE
= 0V,I
c
=250 μA
V
GE
= 0V, I
c
= 1 mA ( 25 -125
o
C )
I
C
= 25A, V
GE
= 15V
I
C
= 30A, V
GE
= 15V
I
C
= 60A, V
GE
= 15V
I
C
= 25A, V
GE
= 15V, T
J
= 125°C
I
C
= 30A, V
GE
= 15V, T
J
= 125°C
V
CE
= V
GE
, I
C
= 250 μA
mV/
o
C
V
CE
= V
GE
, I
C
= 1 mA ( 25 -125
o
C )
S
V
CE
= 50V, I
C
= 25A, PW =80μs
V
GE
= 0V,V
CE
= 1200V
μA
V
GE
= 0v, V
CE
= 1200V, T
J
=125°C
V
GE
= 0v, V
CE
= 1200V, T
J
=150°C
I
C
= 25A
V
I
C
= 30A
I
C
= 25A, T
J
= 125°C
I
C
= 30A, T
J
= 125°C
nA
V
GE
= ±20V
+1.2
2.28
2.46
3.43
2.74
2.98
5.0
- 1.2
16.9
V/°C
2.48
2.66
4.00
3.10
3.35
6.0
5, 6
Collector-to-Emitter Saturation
7, 9
V
CE(on)
Voltage
V
10
11
V
GE(th)
V
GE(th)
/
Tj
g
fe
Gate Threshold Voltage
4.0
V
9,10,11,12
Temperature Coeff. of Threshold Voltage
Forward Transconductance
14.8
19.0
250
675
2000
2.06
2.17
2.18
2.40
±100
I
CES
Zero Gate Voltage Collector Current
325
1.76
1.86
1.87
2.01
V
FM
Diode Forward Voltage Drop
8
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
Min.
Typ.
169
19
82
1066
1493
Max. Units
254
29
123
1250
1800
Conditions
Fig.
I
C
= 25A
V
CC
=600V
V
GE
= 15V
I
C
= 25A, V
CC
= 600V
V
GE
= 15V, Rg = 5
,
L=200μH
T
J
= 25
o
C, Energy losses include tail
and diode reverse recovery
Ic =25A, V
CC
=600V
V
GE
= 15V, Rg = 5
,
L=200μH
T
J
= 125
o
C, Energy losses include tail
and diode reverse recovery
Ic =25A, V
CC
=600V
V
GE
= 15V, Rg = 5
,
L=200μH
T
J
= 125
o
C,
23
nC
CT1
CT4
μJ
WF1
E
tot
Total Switching Loss
2559
3050
WF2
E
on
E
off
Turn-on Switching Loss
1660
2118
1856
2580
13, 15
Turn-off Switching Loss
μJ
CT4
E
tot
Total Switching Loss
3778
4436
WF1 & 2
td(on)
tr
td(off)
tf
C
ies
C
oes
C
res
Turn - on delay time
50
25
210
60
2200
210
85
65
35
230
75
14, 16
Rise time
ns
CT4
Turn - off delay time
WF1
Fall time
WF2
Input Capacitance
V
GE
= 0V
V
CC
= 30V
f = 1.0 MHz
T
J
=150
o
C, Ic = 120A
V
CC
= 1000V, V
P
= 1200V
Rg = 5
, V
GE
= +15V to 0 V
T
J
= 150
o
C
V
CC
= 900V,V
P
= 1200V
Rg = 5
, V
GE
= +15V to 0 V
T
J
= 125
o
C
V
CC
= 600V, Ic = 25A
V
GE
= 15V, Rg = 5
,
L=200μH
Measured 5 mm from the package.
Output Capacitance
pF
22
Reverse Transfer Capacitance
4
RBSOA
Reverse bias safe operating area
FULL SQUARE
CT2
CT3
SCSOA
Short Circuit Safe Operating Area
10
----
----
μs
WF4
E
rec
trr
Irr
Le
Reverse recovery energy of the diode
1820
300
34
13
2400
μJ
ns
A
nH
17,18,19
Diode Reverse recovery time
20, 21
Peak Reverse Recovery Current
38
CT4, WF3
Internal Emitter Inductance
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRGP30B120KD-EP 功能描述:IGBT 晶體管 1200V ULTRAFAST 5-40 KHZ COPACK IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGP30B120KD-EP 制造商:International Rectifier 功能描述:IGBT N CH 1200V 60A TO-247AD 制造商:International Rectifier 功能描述:IGBT, N CH, 1200V, 60A, TO-247AD
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