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參數(shù)資料
| 型號(hào)： | IRGBC40S |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A) |
| 中文描述： | 絕緣柵雙極晶體管（VCES和\u003d 600V的，@和VGE \u003d 15V的，集成電路\u003d 31A條） |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大小： | 249K |
| 代理商： | IRGBC40S |
C-19
IRGBC40S
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Case Temperature
0
1000
2000
3000
1
10
100
C
V , Collector-to-Emitter Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
ies
C
res
C
oes
0
4
8
12
16
20
0
10
20
30
40
50
60
G
V
Q , Total Gate Charge (nC)
V = 400V
I = 31A
13.2
13.4
13.6
13.8
14.0
14.2
14.4
14.6
0
10
20
30
40
50
60
T
R , Gate Resistance ( )
W
V = 480V
V = 15V
T = 25°C
I = 31A
1
10
100
-60
-40
-20
T , Case Temperature (°C)
0
20
40
60
80
100
120
140
160
T
R = 10
V = 15V
V = 480V
I = 62A
I = 31A
I = 16A
To Order
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