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參數(shù)資料
| 型號(hào)： | IRGBC20F |
| 廠商： | International Rectifier |
| 英文描述： | Insulated Gate Bipolar Transistors (IGBTs)(超快速絕緣柵型雙極型晶體管) |
| 中文描述： | 絕緣門雙極晶體管（IGBTs）（超快速絕緣柵型雙極型晶體管） |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 98K |
| 代理商： | IRGBC20F |
C-55
IRGBC20F
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Case Temperature
0
4
8
12
16
20
0
4
8
12
16
20
G
V
Q , Total Gate Charge (nC)
V = 400V
I = 9.0A
1.24
1.26
1.28
1.30
1.32
1.34
1.36
20
30
40
50
60
T
R , Gate Resistance ( )
W
V = 480V
V = 15V
T = 25°C
I = 9.0A
0.1
1
10
-60
-40
-20
T , Case Temperature (°C)
0
20
40
60
80
100
120
140
160
T
I = 18A
I = 9.0A
I = 4.5A
R = 50
V = 15V
V = 480V
0
100
200
300
400
500
600
700
1
10
100
C
V , Collector-to-Emitter Voltage (V)
C
res
C
oes
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
ies
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