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參數(shù)資料
| 型號： | IRGB8B60KPbF |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 絕緣柵雙極晶體管 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大?。?/td> | 461K |
| 代理商： | IRGB8B60KPBF |
11/18/04
www.irf.com
1
INSULATED GATE BIPOLAR TRANSISTOR
Features
Low VCE (on) Non Punch Through IGBT Technology.
10μs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Lead-Free.
Benefits
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation.
IRGB8B60KPbF
IRGS8B60KPbF
IRGSL8B60KPbF
V
CES
= 600V
I
C
= 20A, T
C
=100°C
t
sc
>10μs, T
J
=150°C
V
CE(on)
typ. = 1.8V
E
C
G
n-channel
Absolute Maximum Ratings
Parameter
Max.
600
28
19
56
56
±20
167
83
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C Maximum Power Dissipation
T
J
Operating Junction and
T
STG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Gate-to-Emitter Voltage
Maximum Power Dissipation
A
V
W
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.50
–––
–––
1.44
Max.
0.90
–––
62
40
–––
Units
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, Steady State)
°C/W
Weight
g
PD - 95645A
D
2
Pak
IRGS8B60K
TO-220AB
IRGB8B60KPbF
TO-262
IRGSL8B60K
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRGB8B60K | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGS8B60K | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGSL8B60K | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC20K | Aluminum Screw Terminal Permissable Abnormal Voltage Capacitor; Capacitance: 4700uF; Voltage: 400V; Case Size: 76.2x110 mm; Packaging: Bulk |
| IRGBC20MD2-S | Aluminum Screw Terminal Permissable Abnormal Voltage Capacitor; Capacitance: 100uF; Voltage: 450V; Case Size: 22x30 mm; Packaging: Bulk |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGBC20 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A) |
| IRGBC20F | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A) |
| IRGBC20FD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:IRGBC20FD2 |
| IRGBC20K | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGBC20KD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
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