參數(shù)資料
型號(hào): IRGB4064DPBF
廠商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述: 絕緣柵雙極型晶體管,超快軟恢復(fù)DIODEINSULATED柵雙極晶體管與超快軟恢復(fù)二極管
文件頁數(shù): 4/10頁
文件大?。?/td> 381K
代理商: IRGB4064DPBF
IRGB4064DPbF
4
www.irf.com
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80μs
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80μs
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
0
5
10
15
20
VGE (V)
0
10
20
30
40
IC
TJ = 25°C
TJ = 175°C
0
2
4
6
8
10
VCE (V)
0
10
20
30
40
IC
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
VF (V)
0
10
20
30
40
50
60
70
80
IF
-40°C
25°C
175°C
5
10
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VC
ICE = 5.0A
ICE = 10A
ICE = 20A
5
10
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VC
ICE = 5.0A
ICE = 10A
ICE = 20A
5
10
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VC
ICE = 5.0A
ICE = 10A
ICE = 20A
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