參數(shù)資料
型號(hào)： IRG4PSC71K
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.83V, @Vge=15V, Ic=60A)
中文描述： 絕緣柵雙極晶體管（VCES和\u003d 600V電壓的Vce（on）典型.\u003d 1.83V，@和VGE \u003d 15V的，集成電路\u003d 60A條）
文件頁數(shù)： 2/8頁
文件大小： 152K
代理商： IRG4PSC71K
IRG4PSC71K
2
www.irf.com
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min. Typ. Max. Units
600
–––
18
–––
–––
0.5
–––
1.83
–––
2.20
–––
1.81
3.0
–––
–––
-8.0
31
46
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V
(BR)CES
V
(BR)ECS
–––
–––
–––
2.3
–––
–––
6.0
–––
–––
500
2.0
5.0
±100
V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 10mA
I
C
= 60A V
GE
= 15V
I
C
= 100A
I
C
= 60A , T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
mV/°C V
CE
= V
GE
, I
C
= 1.5mA
S
V
CE
= 50V, I
C
= 60A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
mA
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
nA
V
GE
= ±20V
V/°C
V
CE(ON)
Collector-to-Emitter Saturation Voltage
See Fig.2, 5
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
g
fe
Forward Transconductance
Gate Threshold Voltage
I
GES
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
μA
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs, single shot.
Current limited by the package, (Die current = 100A)
Repetitive rating; V
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
= 80%(V
CES
), V
GE
= 20V, L =
10μH, R
G
= 5.0
,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
sc
Short Circuit Withstand Time
Min. Typ. Max. Units
—
340
—
44
—
160
—
34
—
54
—
251
—
89
—
0.79
—
1.98
—
2.77
10
—
Conditions
I
C
= 60A
V
CC
= 400V
V
GE
= 15V
510
66
240
—
—
377
133
—
—
3.1
—
nC
See Fig.8
T
J
= 25°C
I
C
= 60A, V
CC
= 480V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
and diode reverse recovery
See Fig. 9,10,18
V
CC
= 360V, T
J
= 125°C
V
GE
= 15V, R
G
= 5.0
T
J
= 150°C, See Fig. 10,11,18
I
C
= 60A, V
CC
= 480V
V
GE
= 15V, R
G
= 5.0
,
Energy losses include "tail"
and diode reverse recovery
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
mJ
μs
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
—
—
—
—
—
37
56
356
177
5.5
13
6900
730
190
—
—
—
—
—
—
—
—
—
mJ
nH
pF
See Fig. 7
ns
ns
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