參數(shù)資料
型號(hào)： IRG4PH50KDPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管
文件頁數(shù)： 2/11頁
文件大?。?/td> 683K
代理商： IRG4PH50KDPBF
IRG4PH50KDPbF
2
www.irf.com
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
sc
Short Circuit Withstand Time
Min. Typ. Max. Units
—
180
—
25
—
70
—
87
—
100
—
140
—
200
—
3.83
—
1.90
—
5.73
10
—
Conditions
270
38
110
—
—
300
300
—
—
7.9
—
I
C
= 24A
V
CC
= 400V
V
GE
= 15V
nC
See Fig.8
T
J
= 25°C
I
C
= 24A, V
CC
= 800V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
and diode reverse recovery
See Fig. 9,10,18
V
CC
= 720V, T
J
= 125°C
V
GE
= 15V, R
G
= 5.0
T
J
= 150°C, See Fig. 10,11,18
I
C
= 24A, V
CC
= 800V
V
GE
= 15V, R
G
= 5.0
,
Energy losses include "tail"
and diode reverse recovery
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
T
J
= 25°C See Fig.
T
J
= 125°C 14 I
F
= 16A
T
J
= 25°C See Fig.
T
J
= 125°C 15 V
R
= 200V
T
J
= 25°C See Fig.
T
J
= 125°C 16 di/dt = 200A/μs
T
J
= 25°C See Fig.
T
J
= 125°C 17
mJ
μs
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
67
72
310
390
8.36
13
2800
140
53
90
164
5.8
8.3
260
680 1838
120
76
—
—
—
—
—
—
—
—
—
135
245
10
15
675
mJ
nH
pF
See Fig. 7
ns
I
rr
Diode Peak Reverse Recovery Current
A
Q
rr
Diode Reverse Recovery Charge
nC
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
—
—
A/μs
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
1200
—
—
0.91
—
2.77
—
3.28
—
2.54
3.0
—
—
-10
13
19
—
—
—
—
—
2.5
—
2.1
—
—
Conditions
—
—
3.5
—
—
6.0
—
—
250
6500
3.5
3.0
±100
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 24A
I
C
= 45A
I
C
= 24A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
mV/°C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
= 100V, I
C
= 24A
μA
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
V
I
C
= 16A
I
C
= 16A, T
J
= 150°C
nA
V
GE
= ±20V
V/°C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
V
FM
Diode Forward Voltage Drop
See Fig. 13
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
相關(guān)PDF資料
PDF描述
IRG4PH50K Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管)
IRG4PSH71UDPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4RC10KPBF INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
IRGB20B60PD1PBF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB4055PbF PDP TRENCH 1GBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRG4PH50K-E 制造商:International Rectifier 功能描述:1200V 36.000A TO-247 / IGBT : JA / DISCR
IRG4PH50KPBF 功能描述:IGBT 晶體管 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG4PH50KPBF 制造商:International Rectifier 功能描述:IGBT TO-247
IRG4PH50S 制造商:International Rectifier 功能描述:IGBT TO-247
IRG4PH50S-E 制造商:International Rectifier 功能描述:1200V 74.000A TO-247 / IGBT : JA / DISCR
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*