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參數(shù)資料
| 型號： | IRG4PH40S |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 20A I(C) | TO-247AC |
| 中文描述： | 晶體管| IGBT的|正陳| 1.2KV五（巴西）國際消費(fèi)電子展|甲一（c）|至247AC |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 144K |
| 代理商： | IRG4PH40S |
IRG4PC50S-P
www.irf.com
5
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
0
40
Q , Total Gate Charge (nC)
80
120
160
200
0
4
8
12
16
20
V
G
V
I
= 400V
= 41A
CC
C
-60 -40 -20
0
20
40
60
80 100 120 140 160
°
1
10
100
T , Junction Temperature ( C )
T
R = Ohm
V = 15V
V = 480V
I = A
82
I = A
41
I = A
20.5
1
10
100
0
2000
4000
6000
8000
V , Collector-to-Emitter Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ce
f = 1MHz
+ C
gc ,
+ C
C SHORTED
GE
ies
res
oes
ge
gc
gc
C
ies
C
oes
C
res
0
10
R , Gate Resistance (Ohm)
20
30
40
50
8.5
9.0
9.5
10.0
T
V = 480V
V = 15V
T = 25 C
I = 41A
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相關(guān)代理商/技術(shù)參數(shù) |
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| IRG4PH40SD | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
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| IRG4PH40UD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
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