參數(shù)資料
型號(hào): IRG4IBC30WPBF
廠商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR
中文描述: 絕緣柵雙極晶體管
文件頁數(shù): 3/8頁
文件大?。?/td> 254K
代理商: IRG4IBC30WPBF
IRG4IBC30WPbF
www.irf.com
3
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
1
10
100
1
10
V , Collector-to-Emitter Voltage (V)
I
C
V = 15V
20μs PULSE WIDTH
T = 25 C
°
T = 150 C
°
0.1
1
10
100
5.0
6.0
V , Gate-to-Emitter Voltage (V)
7.0
8.0
9.0
10.0
11.0
I
C
V = 50V
5μs PULSE WIDTH
T = 25 C
°
T = 150 C
0
5
10
15
20
25
0.1
1
10
100
1000
f, Frequency (kHz)
L
A
60% of rated
voltage
Ideal diodes
Square wave:
For both:
Duty cycle: 50%
T = 125°C
T = 90°C
Gate drive as specified
Power Dissipation = 10.6W
Triangular wave:
Clamp voltage:
80% of rated
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