參數(shù)資料
型號： IRG4IBC20KD
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管
文件頁數(shù)： 2/10頁
文件大?。?/td> 230K
代理商： IRG4IBC20KD
IRG4IBC20UD
2
www.irf.com
Parameter
Q
g
Total Gate Charge (turn-on)
Qge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
ts
Total Switching Loss
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
t
rr
Diode Reverse Recovery Time
Min. Typ. Max. Units
–––
27
–––
4.5
–––
10
–––
39
–––
15
–––
93
–––
110
–––
0.16
–––
0.13
–––
0.29
–––
38
–––
17
–––
100
–––
220
–––
0.49
–––
7.5
–––
530
–––
39
–––
7.4
–––
37
–––
55
–––
3.5
–––
4.5
–––
65
–––
124
–––
240
–––
210
Conditions
I
C
= 6.5A
V
CC
= 400V
V
GE
= 15V
T
J
= 25
°
C
I
C
= 6.5A, V
CC
= 480V
V
GE
= 15V, R
G
= 50
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
41
6.8
16
–––
–––
140
170
–––
–––
0.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
55
90
5.0
8.0
138
360
–––
–––
nC
See Fig. 8
ns
mJ
T
J
= 150
°
C, See Fig. 9, 10, 11, 18
I
C
= 6.5A, V
CC
= 480V
V
GE
= 15V, R
G
= 50
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
See Fig. 7
= 1.0MHz
T
J
= 25
°
C See Fig.
T
J
= 125
°
C 14 I
F
= 8.0A
T
J
= 25
°
C See Fig.
T
J
= 125
°
C 15 V
R
= 200V
T
J
= 25
°
C See Fig.
T
J
= 125
°
C 16 di/dt 200A/μs
T
J
= 25
°
C See Fig.
T
J
= 125
°
C 17
ns
mJ
nH
pF
ns
I
rr
Diode Peak Reverse Recovery Current
A
Q
rr
Diode Reverse Recovery Charge
nC
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
A/μs
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
600
–––
–––
0.69
–––
1.85
–––
2.27
–––
1.87
3.0
–––
-11
1.4
4.3
–––
–––
–––
–––
1700
–––
1.4
–––
1.3
–––
–––
±100
Conditions
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 6.5A
I
C
= 13A
I
C
= 6.5A, T
J
= 150
°
C
V
CE
= V
GE
, I
C
= 250μA
–––
–––
2.1
–––
–––
6.0
–––
mV/
°
C V
CE
= V
GE
, I
C
= 250μA
–––
S
V
CE
= 100V, I
C
= 6.5A
250
μA
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150
°
C
1.7
V
I
C
= 8.0A
1.6
I
C
= 8.0A, T
J
= 150
°
C
nA
V
GE
= ±20V
V
V/
°
C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
–––
g
fe
Forward Transconductance
I
CES
Zero Gate Voltage Collector Current
Gate Threshold Voltage
V
FM
Diode Forward Voltage Drop
See Fig. 13
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
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IRG4IBC20KDPBF 功能描述:IGBT 晶體管 600V UltraFast 8-25kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG4IBC20UD 制造商:International Rectifier 功能描述:IGBT TO-220 FULLPAK
IRG4IBC20UDPBF 功能描述:IGBT 晶體管 600V UltraFast 8-60kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRG4IBC20W 功能描述:IGBT WARP 600V 11.8A TO-220FP RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
IRG4IBC20W_04 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR
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