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參數(shù)資料
| 型號： | IRG4BC40W |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A) |
| 中文描述： | 絕緣柵雙極晶體管（VCES和\u003d 600V電壓的Vce（on）典型.\u003d 2.05V，@和VGE \u003d 15V的，集成電路\u003d 20A條） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 129K |
| 代理商： | IRG4BC40W |
Parameter
Max.
600
40
20
160
160
± 20
160
160
65
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
V
mJ
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbfin (1.1Nm)
°C
IRG4BC40W
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91654A
E
C
G
n-channel
Features
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
V
CES
= 600V
V
CE(on) typ.
=
2.05V
@V
GE
= 15V, I
C
= 20A
Absolute Maximum Ratings
W
TO-220AB
Parameter
Typ.
–––
0.5
–––
2.0 (0.07)
Max.
0.77
–––
80
–––
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
°
C/W
g (oz)
Thermal Resistance
4/24/2000
1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4BC40WHR | 制造商:International Rectifier 功能描述:Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB |
| IRG4BC40WL | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4BC40W-LPBF | 功能描述:IGBT 晶體管 600V Warp 60-150kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4BC40WPBF | 功能描述:IGBT 晶體管 600V Warp 60-150kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4BC40WS | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR |
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