參數資料
型號： IRFZ46ZS
廠商： International Rectifier
英文描述： AUTOMOTIVE MOSFET
中文描述： 汽車MOSFET的
文件頁數： 2/12頁
文件大?。?/td> 289K
代理商： IRFZ46ZS
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L =0.13mH,
R
G
= 25
, I
AS
= 31A, V
GS
=10V. Part not
recommended for use above this value.
I
SD
≤
31A, di/dt
≤
1070A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
2
Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
S
D
G
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Β
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient –––
R
DS(on)
Static Drain-to-Source On-Resistance –––
V
GS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Min.
55
Typ. Max. Units
–––
–––
0.053
–––
10.9
13.6
–––
4.0
–––
–––
–––
20
–––
250
–––
200
–––
-200
31
46
7.6
11
12
18
13
–––
63
–––
37
–––
39
–––
4.5
–––
V
V/°C
m
V
S
μA
2.0
45
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
nC
ns
nH
Between lead,
6mm (0.25in.)
from package
L
S
Internal Source Inductance
–––
7.5
–––
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
1460
250
130
860
190
310
–––
–––
–––
–––
–––
–––
pF
Diode Characteristics
Parameter
I
S
Continuous Source Current
Min.
–––
Typ. Max. Units
–––
51
(Body Diode)
Pulsed Source Current
A
I
SM
–––
–––
200
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
21
16
1.3
31
24
V
ns
nC
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 31A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 31A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
R
G
= 15
V
GS
= 10V
I
D
= 31A
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 31A
T
J
= 25°C, I
F
= 31A, V
DD
= 28V
di/dt = 100A/μs
T
J
= 25°C, I
S
= 31A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
MOSFET symbol
V
GS
= 0V, V
DS
= 44V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
Conditions
相關PDF資料
PDF描述
IRFZ48NPBF HEXFET Power MOSFET
IRFZ48Z AUTOMOTIVE MOSFET
IRFZ48ZL AUTOMOTIVE MOSFET
IRFZ48ZS AUTOMOTIVE MOSFET
IRG4BC10K Short Circuit Rated UltraFast IGBT
相關代理商/技術參數
參數描述
IRFZ46ZSHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 51A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 51A 3PIN D2PAK - Bulk
IRFZ46ZSPBF 功能描述:MOSFET 55V SINGLE N-CH 13.6mOhms 31nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFZ46ZSTRLPBF 功能描述:MOSFET MOSFT 55V 51A 13.6mOhm 31nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFZ48 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220AB 制造商:Vishay Semiconductors 功能描述:TRANS MOSFET N-CH 60V 50A 3PIN TO-220AB - Bulk 制造商:NULL 功能描述:Vishay Intertechnology IRFZ48 MOSFETs
IRFZ48_11 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*