參數(shù)資料
型號： IRFZ44STRR
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | TO-263AB
中文描述： 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 50A條（?。﹟對263AB
文件頁數(shù)： 2/10頁
文件大?。?/td> 358K
代理商： IRFZ44STRR
IRFZ46S/L
V
DD
= 25V
,
starting T
J
= 25°C, L = 34μH
R
G
= 25
, I
AS
= 54A. (See Figure 12)
I
SD
≤
54A, di/dt
≤
250A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Pulse width
≤
300μs; duty cycle
≤
2%.
Uses IRFZ46 data and test conditions
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 54A, V
GS
= 0V
T
J
= 25°C, I
F
= 54A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
66
170
2.5
99
310
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
Parameter
Min. Typ. Max. Units
50
–––
–––
0.057 –––
–––
––– 0.024
2.0
–––
27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
–––
120
–––
42
–––
96
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
=1mA
V
GS
=10V, I
D
= 32A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 32A
V
DS
= 50V, V
GS
= 0V
V
DS
= 48V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 54A
V
DS
= 48V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 28V
I
D
= 54A
R
G
= 9.1
R
D
= 0.49
,
See Fig. 10
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
S
4.0
–––
25
250
100
-100
66
21
25
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1800 –––
960
160
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
nH
7.5
L
S
Internal Source Inductance
50
220
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
S
D
G
相關PDF資料
PDF描述
IRFZ44VSTRL TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-263AB
IRFZ44VSTRR TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-263AB
IRFZ46L TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 50A I(D) | TO-262AA
IRFZ48 N-channel enhancement mode TrenchMOS transistor
IRFZ48N N-channel enhancement mode TrenchMOS transistor
相關代理商/技術參數(shù)
參數(shù)描述
IRFZ44STRRPBF 功能描述:MOSFET N-Chan 60V 50 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFZ44V 制造商:International Rectifier 功能描述:MOSFET N TO-220
IRFZ44VL 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A)
IRFZ44VLPBF 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 60V 55A 3-Pin(3+Tab) TO-262
IRFZ44VPBF 功能描述:MOSFET MOSFT 60V 55A 16.5mOhm 44.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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