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參數(shù)資料
| 型號(hào)： | IRFY1310M-T257 |
| 廠商： | SEMELAB LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS |
| 中文描述： | 34 A, 100 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | IRFY1310M-T257 |
Drain
–
Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Test Conditions
V
GS
= 0
V
DS
= V
GS
V
GS
￡
20V
V
GS
= -20V
V
DS
= Max Rate,V
GS
= 0V
V
DS
= 0.8 Max Rate, V
GS
= 0V
Min.
100
2.0
Typ.
Max.
Unit
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
(Body Diode)
IRFY1310M-T257
Prelim. 7/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
I
D
= 250
m
A
I
D
= 250
m
A
T
C
= 125
°
C
V
GS
= 10V
I
D
= 22A
V
GS
= 10V
I
D
= 22A
V
DS
= 25V
V
GS
= 0V
V
DS
= 25V
F = 1MHz
I
D
= 22A
V
DD
=
50V
RG = 3.6
W
I
D
= 22A
R
D
= 2.9
W
Modified MOSPOWER
smbol showing
the integral P-N
Junction rectifier
I
S
= 22A ,V
GS
= 0V, T
C
= 25
°
C
T
J
= 25
°
C
di / dt
=
100A/
m
s
I
F
=22A
ELECTRICAL CHARACTERISTICS
(Tamb= 25
°
C unless otherwise stated)
V
nA
mA
V
W
S
pF
ns
A
V
ns
m
c
Zero Gate Voltage Drain Current
Static Drain
–
Source On
–
State
Voltage
1
Static Drain
–
Source On
–
State
Resistance1
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn
–
On Delay Time
Rise Time
Turn
–
Off Delay Time
Fall Time
Source Current1 (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
4.0
100
-100
0.25
0.1
0.2
1.0
1.10
1.30
0.55
14
1900
450
230
11
56
45
40
34
112
1.3
270
1.8
180
1.2
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
V
DS(on)
R
DS(on)
G
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Qrr
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width
￡
300ms,
d ￡
2%
DYNAMIC CHARACTERISTICS
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