- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360949 > IRFY1310M-T257 N-Channel Power MOSFET For HI-REL Application(Vds:100V,Id(max):14A,Rds(on):0.055Ω)(N溝道功率MOS場效應(yīng)管,HI-REL應(yīng)用(Vds:100V,Id(max):14A,Rds(on):0.055Ω)) PDF資料下載
參數(shù)資料
| 型號： | IRFY1310M-T257 |
| 英文描述： | N-Channel Power MOSFET For HI-REL Application(Vds:100V,Id(max):14A,Rds(on):0.055Ω)(N溝道功率MOS場效應(yīng)管,HI-REL應(yīng)用(Vds:100V,Id(max):14A,Rds(on):0.055Ω)) |
| 中文描述： | N溝道功率MOSFET為高可靠性應(yīng)用（漏源電壓：100V的，身份證（最大值）：14A條的Rds（on）：0.055Ω）（不適用馬鞍山溝道功率場效應(yīng)管，高可靠性應(yīng)用（漏源電壓：100V的，身份證（最大）：14A條的Rds（on）：0.055Ω）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 21K |
| 代理商： | IRFY1310M-T257 |
Drain
–
Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Test Conditions
V
GS
= 0
V
DS
= V
GS
V
GS
￡
20V
V
GS
= -20V
V
DS
= Max Rate,V
GS
= 0V
V
DS
= 0.8 Max Rate, V
GS
= 0V
Min.
100
2.0
Typ.
Max.
Unit
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
(Body Diode)
IRFY1310M-T257
Prelim. 7/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
I
D
= 250
m
A
I
D
= 250
m
A
T
C
= 125
°
C
V
GS
= 10V
I
D
= 22A
V
GS
= 10V
I
D
= 22A
V
DS
= 25V
V
GS
= 0V
V
DS
= 25V
F = 1MHz
I
D
= 22A
V
DD
=
50V
RG = 3.6
W
I
D
= 22A
R
D
= 2.9
W
Modified MOSPOWER
smbol showing
the integral P-N
Junction rectifier
I
S
= 22A ,V
GS
= 0V, T
C
= 25
°
C
T
J
= 25
°
C
di / dt
=
100A/
m
s
I
F
=22A
ELECTRICAL CHARACTERISTICS
(Tamb= 25
°
C unless otherwise stated)
V
nA
mA
V
W
S
pF
ns
A
V
ns
m
c
Zero Gate Voltage Drain Current
Static Drain
–
Source On
–
State
Voltage
1
Static Drain
–
Source On
–
State
Resistance1
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn
–
On Delay Time
Rise Time
Turn
–
Off Delay Time
Fall Time
Source Current1 (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
4.0
100
-100
0.25
0.1
0.2
1.0
1.10
1.30
0.55
14
1900
450
230
11
56
45
40
34
112
1.3
270
1.8
180
1.2
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
V
DS(on)
R
DS(on)
G
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Qrr
STATIC ELECTRICAL RATINGS
Notes
1) Pulse Test: Pulse Width
￡
300ms,
d ￡
2%
DYNAMIC CHARACTERISTICS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFY1310M-T257 | N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS |
| IRFY210 | N-Channel |
| IRFY210C | N-Channel |
| IRFY220 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 4.3A I(D) | TO-220AB |
| IRFY220SM | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | CHIP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFY140 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 16A 3PIN TO-257 - Bulk 制造商:International Rectifier 功能描述:Single N-Channel 100 V 100 W 59 nC Hexfet Power Mosfet Through Hole - TO-257AB |
| IRFY140C | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 16A 3PIN TO-257 - Bulk 制造商:International Rectifier 功能描述:N CH MOSFET, 100V, 16A, TO-257AA; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:100V; On Resistance Rds(on):77mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; No. of Pins:3 ;RoHS Compliant: No |
| IRFY140CM | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 16A 3PIN TO-257 - Bulk 制造商:International Rectifier 功能描述:100V, 16A, 0.077 ohm HEXFET |
| IRFY140CMSCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 16A 3PIN TO-257 - Bulk |
| IRFY140CMSCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 16A 3PIN TO-257 - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。