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參數(shù)資料
| 型號(hào)： | IRFWZ14 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 60V N-Channel Power MOSFET(漏源電壓為60V的N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 10 A, 60 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D2PAK-3 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 227K |
| 代理商： | IRFWZ14 |
IRFWZ14
BV
DSS
= 60 V
R
DS(on)
= 0.14
I
D
= 10 A
60
10
7.1
40
±
20
86
10
3
5.5
3.8
30
0.2
- 55 to +175
300
4.96
40
62.5
--
--
--
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175
°
C Operating Temperature
Lower Leakage Current: 10
μ
A (Max.) @ V
DS
= 60V
Lower R
DS(ON)
: 0.097
(Typ.)
$GYDQFHG 3RZHU 026)(7
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
θ
JC
R
θ
JA
R
θ
JA
°
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
D
2
-PAK
1. Gate 2. Drain 3. Source
1
3
2
1
2
3
I
2
-PAK
*
*
When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
°
C)
Continuous Drain Current (T
C
=100
°
C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (T
A
=25
°
C)
Total Power Dissipation (T
C
=25
°
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
I
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W
W/
°
C
A
°
C
*
1999 Fairchild Semiconductor Corporation
Rev. B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFWZ24 | 60V N-Channel Power MOSFET(漏源電壓為60V的N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| IRFWZ34 | 60V N-Channel Power MOSFET(漏源電壓為60V的N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| IRFWZ44 | 60V N-Channel Power MOSFET(漏源電壓為60V的N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| IRFY330 | N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package |
| IRFY9120 | P-Channel MOSFET in a Hermetically sealed TO257AB Metal Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFWZ14A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-263AB |
| IRFWZ20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 15A I(D) | TO-252VAR |
| IRFWZ24 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-252VAR |
| IRFWZ24A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 17A I(D) | TO-263AB |
| IRFWZ30 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 30A I(D) | TO-252VAR |
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