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參數(shù)資料
| 型號： | IRFU214 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 250V，的Rds（on）\u003d 2.0ohm，身份證\u003d 2.2a在） |
| 文件頁數(shù)： | 5/6頁 |
| 文件大小： | 52K |
| 代理商： | IRFU214 |
4-387
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 10. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 11. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 13. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-60 -40
-20
0
20
40
60
80
100 120 140 160
T
J
, JUNCTION TEMPERATURE (
o
C)
2.5
2.0
1.5
1.0
0.5
0
N
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 5.6A
C
RSS
C
OSS
C
ISS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GS
500
400
300
200
100
0
10
10
1
10
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
T
J
= 150
o
C
T
J
= 25
o
C
10
-1
0.6
0.8
1.0
1.2
1.4
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
I
S
,
10
0
10
1
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V
V
DS
= 200V
V
DS
= 125V
V
DS
= 50V
I
D
= 2.7A
20
16
12
8
4
0
0
2
4
6
8
10
Q
g
, GATE CHARGE (nC)
V
G
,
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
IRFR214, IRFU214
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| IRFU330 | HEXFET Power MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFU214A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.2A I(D) | TO-251AA |
| IRFU214B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET |
| IRFU214BTU | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| IRFU214BTU_FP001 | 功能描述:MOSFET 250V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFU214PBF | 功能描述:MOSFET N-Chan 250V 2.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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