參數(shù)資料
型號： IRFU120N
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/10頁
文件大?。?/td> 152K
代理商： IRFU120N
IRFR/U120N
2
www.irf.com
Parameter
Min.
100
–––
–––
2.0
2.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.12
–––
–––
0.21
–––
4.0
–––
–––
–––
25
–––
250
–––
100
–––
-100
–––
25
–––
4.8
–––
11
4.5
–––
23
–––
32
–––
23
–––
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
Drain-to-Source Breakdown Voltage
V
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 5.6A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 5.7A
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 5.7A
V
DS
= 80V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 50V
I
D
= 5.7A
R
G
= 22
R
D
= 8.6
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
ns
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
330
92
54
–––
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
nH
I
GSS
S
D
G
L
S
Internal Source Inductance
–––
7.5
–––
L
D
Internal Drain Inductance
–––
4.5 –––
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 5.5A, V
GS
= 0V
T
J
= 25°C, I
F
= 5.7A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
99
390
1.3
150
580
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
9.4
38
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 4.7mH
R
G
= 25
, I
AS
= 5.7A. (See Figure 12)
I
SD
≤
5.7A, di/dt
≤
240A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
Uses IRF520N data and test conditions
This is applied for I-PAK, Ls of D-PAK is measured between lead and
center of die contact
Pulse width
≤
300μs; duty cycle
≤
2%
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