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參數(shù)資料
| 型號(hào)： | IRFSZ44A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Power MOSFET（60V，0.024Ω，30A）(N溝道功率MOS場效應(yīng)管（漏源電壓60V，導(dǎo)通電阻0.024Ω，漏電流30A）) |
| 中文描述： | 30 A, 60 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 266K |
| 代理商： | IRFSZ44A |
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175
é
Operating Temperature
Lower Leakage Current : 10
Lower R
DS(ON)
: 0.020
(Max.) @ V
DS
= 60V
(Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
R
R
JC
JA
/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
Continuous Drain Current (T
C
=100
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
)
)
)
Characteristic
Value
60
30
21.2
200
20
771
30
4.5
5.5
45
0.3
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
A
TO-220F
1.Gate 2. Drain 3. Source
3
2
1
IRFSZ44A
BV
DSS
= 60 V
R
DS(on)
= 0.024
I
D
= 30 A
- 55 to +175
300
3.31
62.5
--
--
+
_
O
1
O
O
1
O
1
2
O
3
o
C
o
C
o
C
o
C
o
C
o
C
θ
θ
μ
A
1999 Fairchild Semiconductor Corporation
Rev. B
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