參數(shù)資料
型號: IRFS4227PBF
廠商: International Rectifier
英文描述: PDP SWITCH
中文描述: 等離子開關(guān)
文件頁數(shù): 3/9頁
文件大小: 309K
代理商: IRFS4227PBF
www.irf.com
3
Fig 6.
Typical E
PULSE
vs. Drain Current
Fig 5.
Typical E
PULSE
vs. Drain-to-Source Voltage
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance vs. Temperature
3.0
4.0
5.0
6.0
7.0
8.0
VGS, Gate-to-Source Voltage (V)
0.1
1.0
10.0
100.0
1000.0
ID
(
)
VDS = 25V
60μs PULSE WIDTH
TJ = 25°C
TJ = 175°C
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.0
1.0
2.0
3.0
4.0
RD
ID = 46A
VGS = 10V
130
140
150
160
170
180
190
ID, Peak Drain Current (A)
0
200
400
600
800
1000
E
L = 220nH
C = Variable
100°C
25°C
110
120
130
140
150
160
170
VDS, Drain-to -Source Voltage (V)
100
200
300
400
500
600
700
800
900
1000
E
L = 220nH
C = 0.4μF
100°C
25°C
0.1
1
10
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID
60μs PULSE WIDTH
Tj = 175°C
7.0V
VGS
15V
10V
8.0V
7.0V
TOP
BOTTOM
0.1
1
10
VDS, Drain-to-Source Voltage (V)
10
100
ID
60μs PULSE WIDTH
Tj = 25°C
7.0V
VGS
15V
10V
8.0V
7.0V
TOP
BOTTOM
相關(guān)PDF資料
PDF描述
IRFS4310PBF HEXFET㈢Power MOSFET
IRFSL4310PBF HEXFET㈢Power MOSFET
IRFS4410PBF HEXFET Power MOSFET
IRFSL4410PbF HEXFET Power MOSFET
IRFS4610PbF HEXFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFS4227TRLPBF 功能描述:MOSFET MOSFT 200V 62A 26mOhm 70nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFS4228PBF 功能描述:MOSFET 150V 1 N-CH PDP SWITCH HEXFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFS4228TRLPBF 功能描述:MOSFET MOSFT 150V 83A 15mOhm 72nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFS4229PBF 功能描述:MOSFET 250V 1 N-CH HEXFET PDP SWITCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFS4229TRLPBF 功能描述:MOSFET MOSFT 250V 45A 48mOhm 72nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube