參數(shù)資料
型號(hào): IRFR9310
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A)
中文描述: 功率MOSFET(減振鋼板基本\u003d-為400V,的Rds(on)\u003d 7.0ohm,身份證\u003d- 1.8A)
文件頁(yè)數(shù): 6/10頁(yè)
文件大小: 116K
代理商: IRFR9310
IRFR/U9310
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Q
G
Q
GS
Q
GD
V
G
Charge
-10V
D.U.T.
V
DS
+
I
D
I
G
-3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
-
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
IAS
0.01
t
p
D.U.T
L
VDS
VDD
DRIVER
A
15V
-20V
25
50
75
100
125
150
0
40
80
120
160
200
Starting T , Junction Temperature
( C)
E
A
ID
-0.8A
-1.1A
-1.8A
TOP
BOTTOM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFR9310PBF 功能描述:MOSFET P-Chan 400V 1.8 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR9310TR 功能描述:MOSFET P-Chan 400V 1.8 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR9310TRA 制造商:KERSEMI 制造商全稱:Kersemi Electronic Co., Ltd. 功能描述:Power MOSFET
IRFR9310TRL 功能描述:MOSFET P-Chan 400V 1.8 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR9310TRLA 制造商:KERSEMI 制造商全稱:Kersemi Electronic Co., Ltd. 功能描述:Power MOSFET