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參數(shù)資料
| 型號(hào)： | IRFR3505 |
| 廠商： | International Rectifier |
| 英文描述： | AUTOMOTIVE MOSFET |
| 中文描述： | 汽車MOSFET的 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 587K |
| 代理商： | IRFR3505 |
IRFR3505
IRFU3505
HEXFET
Power MOSFET
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.013
I
D
= 30A
www.irf.com
1
D-Pak
IRFR3505 IRFU3505
I-Pak
Parameter
Typ.
–––
–––
–––
Max.
1.09
40
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
Thermal Resistance
AUTOMOTIVE MOSFET
Specifically designed for Automotive applications, this HEXFET
Power
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this product are
a 175°C junction operating temperature, fast switching speed and im-
proved repetitive avalanche rating. These features combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
The D-Pak is designed for surface mounting using vapor phase, infrared,
or wave soldering techniques. The straight lead version (IRFU series) is
for through-hole mounting applications. Power dissipation levels up to
1.5 watts are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (See Fig.9)
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS
Single Pulse Avalanche Energy
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Description
●
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
●
●
●
●
Features
Max.
Units
71
49
30
280
140
0.92
± 20
210
410
A
W
W/°C
V
mJ
See Fig.12a, 12b, 15, 16
A
mJ
V/ns
4.0
-55 to + 175
°C
300 (1.6mm from case )
PD - 94506A
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|---|---|
| IRFU3505 | AUTOMOTIVE MOSFET |
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| IRFR3704Z | CONN RGT ANGLE HDR 12 |
| IRFU3704Z | HEXFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFR3505HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 71A 3-Pin(2+Tab) DPAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 71A 3PIN DPAK - Bulk |
| IRFR3505PBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 13mOhms 62nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR3505TRHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 71A 3PIN DPAK - Tape and Reel |
| IRFR3505TRLHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 71A 3PIN DPAK - Tape and Reel |
| IRFR3505TRLPBF | 制造商:International Rectifier 功能描述:MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.011Ohm;ID 30A;D-Pak (TO-252AA);PD 140W 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 71A 3PIN DPAK - Tape and Reel |
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