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參數(shù)資料
| 型號： | IRFR320 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 Ω,N溝道增強(qiáng)型功率MOS場效應(yīng)管) |
| 中文描述： | 3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 55K |
| 代理商： | IRFR320 |
4-398
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
I
D
,
100
100
1
10
1
0.1
1000
BY r
DS(ON)
AREA IS LIMITED
10
μ
s
100
μ
s
1ms
10ms
DC
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
I
D
,
0
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
80
120
160
1
2
3
4
5
200
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 5.5V
V
GS
= 5.0V
V
GS
= 6.0V
0
0
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
6
9
15
I
D
,
12
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 5.5V
V
GS
= 6.0V
V
GS
= 5.0V
V
GS
= 4.0V
1
2
3
4
5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
6
8
10
-2
10
1
0.1
I
D
,
T
J
= 150
o
C
T
J
= 25
o
C
10
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
≥
350V
I
D
, DRAIN CURRENT (A)
r
D
,
10
8
6
4
2
00
3
6
9
12
15
V
GS
= 20V
V
GS
= 10V
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
N
3.0
1.8
1.2
0.6
0
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
2.4
80
160
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 1.7A
IRFR320, IRFU320
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFR3209A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.1A I(D) | TO-252AA |
| IRFR320A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.1A I(D) | TO-252AA |
| IRFR320B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:400V N-Channel MOSFET |
| IRFR320BTF | 功能描述:MOSFET 400V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR320BTM | 功能描述:MOSFET 400V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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