參數(shù)資料
型號： IRFR234B
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 250V N-Channel MOSFET
中文描述： 6.6 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： DPAK-3
文件頁數(shù)： 1/9頁
文件大小： 640K
代理商： IRFR234B
2001 Fairchild Semiconductor Corporation
November 2001
Rev. B, November 2001
IRFR234B / IRFU234B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converter and
switch mode power supplies.
Features
6.6A, 250V, R
DS(on)
= 0.45
@V
GS
= 10 V
Low gate charge ( typical 29 nC)
Low Crss ( typical 20 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
IRFR234B / IRFU234B
250
6.6
4.2
26.4
±
30
200
6.6
4.9
5.5
2.5
49
0.39
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
stg
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
--
--
--
Max
2.54
50
110
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
●
●
●
●
●
▲
!
S
!
!
D
G
I-PAK
IRFU Series
D-PAK
IRFR Series
G
S
D
G
S
D
相關PDF資料
PDF描述
IRFU410A Advanced Power MOSFET
IRFW510A Advanced Power MOSFET
IRFI510 Advanced Power MOSFET
IRFI510A Advanced Power MOSFET
IRFWI510A Advanced Power MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
IRFR234BTF_FP001 功能描述:MOSFET 250V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR234BTM_FP001 功能描述:MOSFET 250V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR2405 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 56A 3-Pin(2+Tab) DPAK 制造商:International Rectifier 功能描述:MOSFET N D-PAK
IRFR2405PBF 功能描述:MOSFET 55V 1 N-CH HEXFET 16mOhms 70nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR2405TR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 56A 3-Pin(2+Tab) DPAK T/R
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