- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379240 > IRFR220B (FAIRCHILD SEMICONDUCTOR CORP) 200V N-Channel MOSFET PDF資料下載
參數(shù)資料
| 型號： | IRFR220B |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 200V N-Channel MOSFET |
| 中文描述： | 4.6 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 665K |
| 代理商： | IRFR220B |
2001 Fairchild Semiconductor Corporation
November 2001
Rev. B, November 2001
I
IRFR220B / IRFU220B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
Features
4.6A, 200V, R
DS(on)
= 0.8
@V
GS
= 10 V
Low gate charge ( typical 12 nC)
Low Crss ( typical 10 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
IRFR220B / IRFU220B
200
4.6
2.9
18
±
30
65
4.6
4.0
5.5
2.5
40
0.32
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
stg
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
--
--
--
Max
3.14
50
110
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
●
●
●
●
●
▲
!
S
!
!
D
G
I-PAK
IRFU Series
D-PAK
IRFR Series
G
S
D
G
S
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFU224B | 250V N-Channel MOSFET |
| IRFR224B | 250V N-Channel MOSFET |
| IRFU230B | 200V N-Channel MOSFET |
| IRFR230B | 200V N-Channel MOSFET |
| IRFU234B | 250V N-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFR220BTF | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFR220BTF_FP001 | 功能描述:MOSFET 200V 4.6A N-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR220BTM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFR220BTM_FP001 | 功能描述:MOSFET 200V N-Ch B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR220N | 制造商:International Rectifier 功能描述:MOSFET N D-PAK |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。