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參數(shù)資料
| 型號： | IRFR120TR |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET POWER MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 56K |
| 代理商： | IRFR120TR |
4-380
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
I
D
,
100
100
1
10
1
0.1
1000
BY r
DS(ON)
AREA IS LIMITED
10
μ
s
100
μ
s
1ms
10ms
DC
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
I
D
,
0
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
30
40
3
6
9
12
15
50
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
V
GS
= 8V
V
GS
= 10V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
0
3
0
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
5
6
9
I
D
,
12
4
15
V
GS
= 10V
V
GS
= 4.0V
V
GS
= 6.0V
V
GS
= 7.0V
V
GS
= 5.0V
V
GS
= 8.0V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
6
8
10
100
10
1
0.1
I
D
,
T
J
= 175
o
C
T
J
= 25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
≥
50V
I
D
, DRAIN CURRENT (A)
r
D
,
2.5
2.0
1.5
1.0
0.5
00
8
16
24
32
40
V
GS
= 20V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
N
3.0
1.8
1.2
0.6
0
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
2.4
80
160
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 5.9A
IRFR120, IRFU120
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| IRFR120TRPBF | 功能描述:MOSFET N-Chan 100V 7.7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR120TRR | 功能描述:MOSFET N-Chan 100V 7.7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR120TRRPBF | 功能描述:MOSFET N-Chan 100V 7.7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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