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參數(shù)資料
| 型號： | IRFR120 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 8.4 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 56K |
| 代理商： | IRFR120 |
4-379
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
I
SDM
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Rectifier
-
-
8.4
A
Pulse Source to Drain Current (Note 3)
-
-
34
A
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 8.4A, V
GS
= 0V (Figure 13)
T
J
= 25
o
C, I
SD
= 8.4A, dI
SD
/dt = 100A/
μ
s
T
J
= 25
o
C, I
SD
= 8.4A, dI
SD
/dt = 100A/
μ
s
-
-
2.5
V
Reverse Recovery Time
55
110
240
ns
Reverse Recovery Charge
0.25
0.53
1.1
μ
C
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 25V, starting T
J
= 25
o
C, L = 770
μ
H, R
G
= 25
, Peak I
AS
= 8.4A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
0
0.2
0.4
0.6
0.8
1.0
1.2
0
50
100
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
25
75
125
10
8
6
4
2
175
1
0.1
10
-2
10
-5
10
-4
10
-3
10
-2
0.1
1
10
Z
θ
J
,
t
1
, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
t
1
t
2
0.1
0.05
0.02
0.01
0.2
0.5
10
IRFR120, IRFU120
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFR-120 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Power MOSFET |
| IRFR120_R4941 | 功能描述:MOSFET TO-252AA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR1205 | 功能描述:MOSFET N-CH 55V 44A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFR1205HR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 44A 3PIN DPAK - Bulk |
| IRFR1205PBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 27mOhms 43.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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