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參數(shù)資料
| 型號： | IRFP450 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET(14A, 500V, 0.400Ω, N溝道MOS場效應管) |
| 中文描述： | 14 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 55K |
| 代理商： | IRFP450 |
4-353
File Number
2331.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
IRFP450
14A, 500V 0.400 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17435.
Features
14A, 500V
r
DS(ON)
= 0.400
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP450
TO-247
IRFP450
NOTE: When ordering, use the entire part number.
G
D
S
SOURCE
DRAIN
GATE
DRAIN
(TAB)
Data Sheet
July 1999
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| IRFR220 | 4.6A, 200V, 0.800 Ohm,N-Channel PowerMOSFET(4.6A, 200V, 0.800 Ω,nN溝道增強型功率MOS場效應管) |
| IRFU220 | 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFP450_R4943 | 功能描述:MOSFET TO-247 N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP450A | 功能描述:MOSFET N-Chan 500V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP450A_R4944 | 功能描述:MOSFET TO-3P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP450APBF | 功能描述:MOSFET N-Chan 500V 14 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP450B | 功能描述:MOSFET 500V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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