- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384496 > IRFP3415 (International Rectifier) Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) PDF資料下載
參數(shù)資料
| 型號(hào)： | IRFP3415 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 150伏，的Rds（on）\u003d 0.042ohm，身份證\u003d 43A章） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 92K |
| 代理商： | IRFP3415 |
IRFP3415
2
www.irf.com
Parameter
Min. Typ. Max.
Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 22A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 22A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
–––
–––
–––
–––
260
2.2
1.3
390
3.3
V
ns
μC
Source-Drain Ratings and Characteristics
S
D
G
Parameter
Min. Typ. Max.
150
–––
–––
0.17
–––
–––
0.042
2.0
–––
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
–––
55
–––
71
–––
69
Units
V
V/
°
C
V
S
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 22A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 22A
V
DS
= 150V, V
GS
= 0V
V
DS
= 120V, V
GS
= 0V, T
J
= 150
°
C
V
GS
= 20V
V
GS
= -20V
I
D
= 22A
V
DS
= 120V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 75V
I
D
= 22A
R
G
= 2.5
R
D
= 3.3
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
4.0
–––
25
250
100
-100
200
17
98
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
2400
640
340
–––
–––
–––
pF
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
22A, di/dt
≤
820A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175
°
C
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
V
DD
= 25V, starting T
J
= 25
°
C, L = 2.4mH
R
G
= 25
, I
AS
= 22A. (See Figure 12)
43
150
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFP344 | Power MOSFET(Vdss=450V, Rds(on)=0.63ohm, Id=9.5A) |
| IRFP354 | Power MOSFET(Vdss=450V, Rds(on)=0.35ohm, Id=14A) |
| IRFP448 | HEXFET POWER MOSFET |
| IRFP450 | N-Channel Enhancement Mode Standard Power MOSFET(最大漏源擊穿電壓500V,導(dǎo)通電阻0.40Ω的N溝道增強(qiáng)型標(biāo)準(zhǔn)功率MOSFET) |
| IRFP460A | Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFP3415PBF | 功能描述:MOSFET MOSFT 150V 43A 42mOhm 144.4nCAC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP341R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 11A I(D) | TO-247AC |
| IRFP342 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 8.4A I(D) | TO-247AC |
| IRFP342R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 8.7A I(D) | TO-247AC |
| IRFP343 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 8.4A I(D) | TO-247AC |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。