參數資料
型號： IRFP22N60K
廠商： International Rectifier
英文描述： SMPS MOSFET
中文描述： MOSFET的開關電源
文件頁數： 2/8頁
文件大?。?/td> 172K
代理商： IRFP22N60K
2
www.irf.com
Symbol
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Parameter
Min. Typ. Max. Units
600
–––
–––
0.30
–––
240
3.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 13A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, V
GS
= 0V, T
J
= 125°C
V
GS
= 30V
V
GS
= -30V
Drain-to-Source Breakdown Voltage
–––
–––
280
5.0
50
250
100
-100
V
V/°C
m
V
μA
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Diode Characteristics
Symbol
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
Parameter
Min. Typ. Max. Units
11
–––
–––
–––
–––
–––
–––
–––
–––
26
–––
99
–––
48
–––
37
–––
3570
–––
350
–––
36
–––
4710
–––
92
–––
180
Conditions
V
DS
= 50V, I
D
= 13A
I
D
= 22A
V
DS
= 480V
V
GS
= 10V
V
DD
= 300V
I
D
= 22A
R
G
= 6.2
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 480V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 480V
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
150
45
76
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
pF
ns
Static @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 1.5mH, R
G
= 25
,
I
AS
= 22A
I
SD
≤
22A, di/dt
≤
540 A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C.
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
S
D
G
Parameter
Min. Typ. Max. Units
–––
–––
Conditions
22
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 22A, V
GS
= 0V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
–––
–––
88
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
590
670
7.2
8.5
26
1.5
890
1010
11
13
39
V
I
F
= 22A
di/dt = 100A/μs
I
RRM
t
on
Reverse Recovery Current
Forward Turn-On Time
A
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
ns
μC
θ
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