參數(shù)資料
型號(hào)： IRFP140N
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=100V, Rds(on)=0,052ohm, Id=33A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 100V的，的Rds（on）\u003d 0052歐姆，身份證\u003d 33A條）
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 126K
代理商： IRFP140N
2
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
V
DS
= 95V, V
GS
= 0V
V
DS
= 90V, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±
20V
100
-
-
V
Zero Gate Voltage Drain Current
-
-
1
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
r
DS(ON)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
I
D
= 33A, V
GS
= 10V (Figure 9)
2
-
4
V
Drain to Source On Resistance
-
0.033
0.040
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
TO-247
-
-
1.25
o
C/W
o
C/W
Thermal Resistance Junction to
Ambient
-
-
30
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
V
DD
= 50V, I
D
= 33A
V
GS
=
10V,
R
GS
= 9.1
(Figures 18, 19)
-
-
100
ns
Turn-On Delay Time
-
9.5
-
ns
Rise Time
-
57
-
ns
Turn-Off Delay Time
-
40
-
ns
Fall Time
-
55
-
ns
Turn-Off Time
-
-
145
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
Q
g(10)
Q
g(TH)
Q
gs
Q
gd
V
GS
= 0V to 20V
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 50V,
I
D
= 33A,
I
g(REF)
= 1.0mA
(Figures 13, 16, 17)
-
66
79
nC
Gate Charge at 10V
-
35
42
nC
Threshold Gate Charge
-
2.4
2.9
nC
Gate to Source Gate Charge
-
5.4
-
nC
Gate to Drain "Miller" Charge
-
13
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
C
OSS
C
RSS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 12)
-
1220
-
pF
Output Capacitance
-
295
-
pF
Reverse Transfer Capacitance
-
100
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 33A
I
SD
= 17A
I
SD
= 33A, dI
SD
/dt = 100A/
μ
s
I
SD
= 33A, dI
SD
/dt = 100A/
μ
s
-
-
1.25
V
-
-
1.00
V
Reverse Recovery Time
t
rr
-
-
112
ns
Reverse Recovered Charge
Q
RR
-
-
400
nC
IRFP140N
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