參數(shù)資料
型號(hào)： IRFP1405
廠商： International Rectifier
英文描述： AUTOMOTIVE MOSFET
中文描述： 汽車(chē)MOSFET的
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 196K
代理商： IRFP1405
2
www.irf.com
S
D
G
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Min.
55
–––
–––
2.0
77
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.058
–––
4.2
5.3
–––
4.0
–––
–––
–––
20
–––
250
–––
200
–––
-200
120
180
30
–––
53
–––
12
–––
160
–––
140
–––
150
–––
5.0
–––
V
V/°C
m
V
S
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
nC
ns
Between lead,
nH
6mm (0.25in.)
from package
L
S
Internal Source Inductance
–––
13
–––
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
5600
1310
350
6550
920
1750
–––
–––
–––
–––
–––
–––
pF
Source-Drain Ratings and Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Min.
–––
Typ. Max. Units
–––
95
A
–––
–––
640
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
70
170
1.3
110
260
V
ns
nC
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 44V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 95A
R
G
= 2.6
V
GS
= 10V
T
J
= 25°C, I
S
= 95A, V
GS
= 0V
T
J
= 25°C, I
F
= 95A, V
DD
= 28V
di/dt = 100A/μs
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 95A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 95A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
D
= 95A
V
DS
= 44V
Conditions
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.12mH
R
G
= 25
, I
AS
= 95A, V
GS
=10V. Part not
recommended for use above this value.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
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