參數(shù)資料
型號(hào)： IRFP064N
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 55V的，的Rds（on）\u003d 0.008ohm，身份證\u003d已廢除）
文件頁數(shù)： 2/8頁
文件大?。?/td> 107K
代理商： IRFP064N
IRFP064N
Parameter
Min. Typ. Max. Units
55
–––
–––
0.057 –––
–––
––– 0.008
2.0
–––
42
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
–––
100
–––
43
–––
70
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 59A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 59A
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 59A
V
DS
= 44V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 28V
I
D
= 59A
R
G
= 2.5
R
D
= 0.39
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
S
4.0
–––
25
250
100
-100
170
32
74
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
4000 –––
1300 –––
480
pF
–––
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
5.0
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 190μH
R
G
= 25
, I
AS
= 59A. (See Figure 12)
I
SD
≤
59A, di/dt
≤
290A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
Caculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 59A, V
GS
= 0V
T
J
= 25°C, I
F
= 59A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
–––
–––
–––
–––
110
450
1.3
170
680
V
ns
nC
Source-Drain Ratings and Characteristics
S
D
G
110
390
13
Uses IRF3205 data and test conditions
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