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參數(shù)資料
| 型號(hào)： | IRFN9130SMD05 |
| 英文描述： | P-Channel |
| 中文描述： | P溝道 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 21K |
| 代理商： | IRFN9130SMD05 |
IRF9130SMD05
N
IRFN9130SMD05
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukPrelim. 10/00
Parameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
Reference to 25°C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
3
15V
V
GS
= 0
I
D
= 1mA
I
D
= 5A
I
D
= 8A
I
D
= 250
m
A
I
DS
= 5A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5BV
DSS
I
D
= 8A
V
DS
= 0.5BV
DSS
I
D
= 8A
V
DD
= 50V
I
D
= 8A
R
G
= 7.5
W
I
S
= 8A
V
GS
= 0
I
S
= 8A
d
i
/ d
t
￡
100A/
m
s V
DD
￡
50V
T
J
= 25°C
T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
100
0.1
0.35
0.4
4
2
3
25
250
100
-100
860
350
125
12.5
29
1.0
2
6.3
27
60
140
140
140
8
32
4.7
300
3
8.7
8.7
V
V/°C
W
V
S
(
(
W
)
m
A
nA
pF
nC
nC
ns
A
V
ns
m
C
nH
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
L
D
L
S
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
Internal Source Inductance
(from 6mm down source lead to centre of source bond pad)
(from 6mm down drain lead pad to centre of die)
PACKAGE CHARACTERISTICS
相關(guān)PDF資料 |
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| IRF9130SMD | P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P溝道功率MOS場(chǎng)效應(yīng)管,HI-REL應(yīng)用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) |
| IRF9130 | P-CHANNEL POWER MOSFETS |
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| IRF9130SMD | P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS |
相關(guān)代理商/技術(shù)參數(shù) |
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