參數(shù)資料
型號(hào): IRFN440
廠商: International Rectifier
英文描述: POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=8.0A)
中文描述: 功率MOSFET N溝道(BVdss \u003d 500V及的Rds(on)\u003d 0.85ohm,身份證\u003d 8.0A)
文件頁(yè)數(shù): 5/6頁(yè)
文件大小: 213K
代理商: IRFN440
IRFN440 Device
Fig. 12c — Max. Avalanche Energy vs. Current
Fig. 13a — Gate Charge Test Circuit
Fig. 12a — Unclamped Inductive Test Circuit
Fig. 12b — Unclamped Inductive Waveforms
0.01
0.00001
0.1
1
10
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T= P
x Z
+ T
2
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
t
0.01
0.02
0.05
0.10
0.20
0.50
(THSINGLE PULSE
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
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