參數(shù)資料
型號： IRFM8240
廠商： International Rectifier
英文描述： POWER MOSFET THRU-HOLE (TO-254AA)
中文描述： 功率MOSFET的通孔（對254AA）
文件頁數(shù)： 2/7頁
文件大小： 191K
代理商： IRFM8240
IRFM9240
2
www.irf.com
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthCS
Case-to-sink
RthJA
Junction-to-Ambient
Min Typ Max
—
—
—
0.21
—
—
Units
Test Conditions
1.0
—
48
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
-11
-44
Test Conditions
—
—
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-4.6
440
7.2
V
nS
μc
T
j
= 25°C, IS = -11A, VGS = 0V
Tj = 25°C, IF = -11A, di/dt
≤
-100A/
μ
s
VDD
≤
-50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-200
—
Typ
—
-0.2
Max Units
—
—
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
BVDSS
V
V/°C
—
—
-2.0
4.0
—
—
—
— 0.52
VGS = -10V, ID = -11A
— -4.0 V VDS = VGS, ID = -250μA
—
—
S (
)
VDS > -15V, IDS = -7.0A
—
-25
—
-250
VGS = 0V, TJ = 125°C
—
-100
—
100
—
60
—
15
nC
—
38
—
35
—
85
—
85
—
65
6.8
—
nH
Measured from drain lead (6mm/
0.25in. from package) to source lead
(6mm/0.25in. from package)
0.51
VGS = -10V, ID = -7.0A
VDS= -160V, VGS= 0V
VDS = -160V
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
VGS = -20V
VGS =20V
VGS = -10V, ID= -11A
VDS = -100V
VDD = -100V, ID = -11A,
RG =9.1
,
VGS = -10V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1200
570
81
VGS = 0V, VDS = -25V
f = 1.0MHz
—
—
pF
nA
ns
μ
A
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