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參數(shù)資料
| 型號： | IRFM260 |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.060ohm, Id=35A*) |
| 中文描述： | 晶體管N溝道（BVdss \u003d 200V的電壓，的Rds（on）\u003d 0.060ohm，身份證\u003d 35A條*） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 442K |
| 代理商： | IRFM260 |
IRFM260
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
200
—
Typ
—
0.24
Max Units
—
—
Test Conditions
Reference to 25°C, ID = 1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
2.0
22
—
—
—
—
—
—
—
—
0.060
0.068
4.0
—
25
250
VGS = 10V, ID = 28A
VGS = 10V, ID = 35A
VDS = VGS, ID = 250μA
VDS > 15V, IDS = 28A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20 V
VGS = -20V
VGS = 10V, ID = 35A
VDS = Max Rating x 0.5
V
VGS(th)
gfs
IDSS
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
100
-100
230
40
110
29
120
110
92
—
nC
VDD = 100V, ID = 35A,
RG = 2.35
LS
Internal Source Inductance
—
8.7
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
5100
1100
280
—
—
—
VGS = 0V, VDS = 25 V
f = 1.0MHz
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ Max Units
—
—
—
—
Test Conditions
35*
180
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.8
420
4.9
V
ns
μ
C
T
j
= 25°C, IS = 35A, VGS = 0V
Tj = 25°C, IF = 35A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthCS
Case-to-Sink
RthJA
Junction-to-Ambient
Min Typ Max
—
—
—
0.21
—
—
Units
Test Conditions
0.50
—
48
K/W
Mounting surface flat, smooth, and greased
Typical socket mount
nA
nH
ns
Measured from drain lead,
6mm (0.25 in) from package
to center of die.
Measured from source lead,
6mm (0.25 in) from package
to source bonding pad.
Modified MOSFET symbol show-
μ
A
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