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參數(shù)資料
| 型號： | IRFL1006TR |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.3A I(D) | SOT-223 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 2.3AI（四）|的SOT - 223 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 160K |
| 代理商： | IRFL1006TR |
IRFL1006
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
2
Q , Total Gate Charge (nC)
4
6
8
10
0
4
8
12
16
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
1.6A
V
= 12V
DS
V
= 30V
DS
V
= 48V
DS
0.1
1
10
0.4
0.6
0.8
1.0
1.2
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
T = 150 C
0.1
1
10
100
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
100us
1ms
10ms
1
10
100
0
60
120
180
240
300
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
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