- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384494 > IRFF9130 (International Rectifier) POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) PDF資料下載
參數(shù)資料
| 型號(hào)： | IRFF9130 |
| 廠商： | International Rectifier |
| 英文描述： | POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) |
| 中文描述： | 功率MOSFET P溝道（BVdss \u003d- 100V的，的Rds（on）\u003d 0.30ohm，身份證\u003d- 6.5A） |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 327K |
| 代理商： | IRFF9130 |
4-103
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
I
SDM
Modified MOSFET
Symbol Showing the In-
tegral Reverse
P-N Junction Diode
-
-
-6.5
A
Pulse Source to Drain Current
(Note 3)
-
-
-26
A
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
Q
RR
T
C
= 25
o
C, I
SD
= 6.5A, V
GS
= 0V (Figure 13)
T
J
= 150
o
C, I
SD
= 6.5A, dI
SD
/dt = 100A/
μ
s
T
J
= 150
o
C, I
SD
= 6.5A, dI
SD
/dt = 100A/
μ
s
-
-
-1.5
V
Reverse Recovery Time
-
300
-
ns
Reverse Recovered Charge
-
1.8
-
μ
C
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 25V, starting T
J
= 25
o
C, L = 17.75mH, R
G
= 25
, peak I
AS
= 6.5A. (Figures 15, 16).
G
D
S
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
T
C,
CASE TEMPERATURE (
o
C)
50
75
100
25
150
-7.0
-5.6
-4.2
0
-2.8
I
D
D
-1.4
125
t
1
, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
10
-3
10
-2
1
10
-5
10
-4
0.01
0.1
10
10
-1
1
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
t
1
t
2
SINGLE PULSE
0.1
0.02
0.2
0.5
0.01
0.05
IRFF9130
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFF9210 | HEXFET TRANSISTORS THRU-HOLE (TO-205AF) |
| IRFF9220 | -2.5A, -200V, 1.5 Ohm, P-Channel Power MOSFETs |
| IRFF9220 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF) |
| IRFF9230 | -4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET |
| IRFF9230 | HEXFET TRANSISTORS THRU-HOLE (TO-205AF) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFF9130 | 制造商:International Rectifier 功能描述:MOSFET P CH 100V 6.5A TO-39 |
| IRFF9130 | 制造商:International Rectifier 功能描述:TRANSISTOR |
| IRFF9130/043383-108/BFG | 制造商:International Rectifier 功能描述:HEXFET, HI-REL - Bulk |
| IRFF9130_11 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:P-CHANNEL POWER MOSFET |
| IRFF9131 | 制造商:Harris Corporation 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。