參數(shù)資料
型號(hào): IRFF9130
廠商: INTERSIL CORP
元件分類: 功率晶體管
英文描述: -6.5A, -100V, 0.300 Ohm, P-Channel Power MOSFET
中文描述: 6.5 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù): 4/7頁
文件大?。?/td> 327K
代理商: IRFF9130
4-104
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
2
10
1
1
10
100
OPERATION IN THIS REGION
IS LIMITED BY r
DS(ON)
0.1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
J
= MAX RATED
R
JC
= 5.0
o
C/W
SINGLE PULSE
10
μ
s
100
μ
s
1ms
DC
T
C
= 25
o
C
10ms
100ms
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
-10
-20
-30
-40
0
-50
-20
-16
-12
0
-8
I
D
,
V
GS
= -10V
V
GS
= -8V
V
GS
= -6V
V
GS
= -7V
V
GS
= -5V
V
GS
= -4V
PULSE DURATION = 80
μ
s
-4
V
GS
= -9V
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
-1
-2
-3
-4
0
-5
-10
-8
-6
0
-4
I
D
,
V
GS
= -10V
V
GS
= -8V
V
GS
= -6V
V
GS
= -5V
V
GS
= -4V
PULSE DURATION = 80
μ
s
-2
V
GS
= -9V
V
GS
= -7V
-20
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
-16
-12
-8
0
-8
-6
-4
-2
0
-10
T
J
= 25
o
C
T
J
= -55
o
C
-4
PULSE DURATION = 80
μ
s
V
DS
>
I
D(ON)
x r
DS(ON)
MAX
T
J
= 125
o
C
-40
I
D,
DRAIN CURRENT (A)
-10
-20
-30
0
-50
1.0
0.8
0.6
0
0.4
r
D
,
V
GS
= -20V
0.2
V
GS
= -10V
O
PULSE DURATION = 2
μ
s
2.2
1.4
0.6
80
-40
T
J
, JUNCTION TEMPERATURE (
o
C)
N
1.8
1.0
0.2
0
40
120
160
O
V
GS
= -10V
I
D
= -3A
IRFF9130
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