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參數(shù)資料
| 型號： | IRFF9110 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET TRANSISTORS THRU-HOLE (TO-205AF) |
| 中文描述： | 的HEXFET三極管通孔（至205AF） |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 143K |
| 代理商： | IRFF9110 |
IRFF9110
2
www.irf.com
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
Min Typ Max
—
—
—
—
Units
Test Conditions
8.3
175 Typical socket mount
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
-2.5
-10
-5.5
200
4.0
Test Conditions
—
—
—
—
—
V
nS
μC
T
j
= 25°C, IS =-2.5A, VGS = 0V
Tj = 25°C, IF = -2.5A, di/dt
≤
-100A/
μ
s
VDD
≤
-50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
-100
—
Typ
—
-0.10
Max Units
—
—
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
-2.0
0.8
—
—
—
— 1.38
VGS =-10V, ID = -2.5A
—
-4.0 V VDS = VGS, ID = -250
μ
A
—
—
S (
)
VDS > -15V, IDS = -1.6A
—
-25
—
-250
μA
1.2 VGS = -10V, ID = -1.6A
VGS(th)
gfs
IDSS
VDS= -80V, VGS=0V
VDS = -80V
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-10V, ID = -2.5A
VDS= -50V
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
4.0
0.8
1.9
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
-100
100
9.8
1.8
4.3
30
60
40
40
—
nA
nC
VDD = -50V, ID = -2.5A,
RG =7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
200
85
30
VGS = 0V, VDS = -25V
f = 1.0MHz
—
—
pF
nH
ns
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
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| IRFF9121 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-205AF |
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