參數(shù)資料
型號: IRFF310
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET(1.35A, 400V, 3.600 Ω, N溝道功率MOS場效應(yīng)管)
中文描述: 1.35 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù): 4/7頁
文件大?。?/td> 326K
代理商: IRFF310
4
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
μ
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
50
1000
1
10
100
0.05
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA IS LIMITED
BY r
DS(ON)
10ms
100ms
1ms
10
μ
s
100
μ
s
DC
10
1
0.1
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
20
30
40
0
50
10
8
6
0
4
I
D
,
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 4V
80
μ
s PULSE TEST
2
V
GS
= 5V
V
GS
= 9V
V
GS
= 10V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
2
3
4
0
5
5
4
3
0
2
I
D
,
V
GS
= 10V
V
GS
= 9V
V
GS
= 8V
V
GS
= 6V
V
GS
= 7V
V
GS
= 5V
80
μ
s PULSE TEST
1
V
GS
= 4V
V
DS
> I
D(ON)
x r
DS(ON)
MAX
80
μ
s PULSE TEST
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
5
3
1
0
0
2
4
6
8
10
2
4
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
I
D
, DRAIN CURRENT (A)
2
4
6
8
0
10
4
3
0
2
r
D
,
V
GS
= 20V
1
V
GS
= 10V
2
μ
s PULSE TEST
O
2.2
1.4
0.6
0
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 5.6A
1.8
1.0
0.2
-40
40
80
120
V
GS
= 10V
O
IRFF310
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