參數(shù)資料
型號: IRFF230
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET
中文描述: 5.5 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁數(shù): 5/7頁
文件大?。?/td> 327K
代理商: IRFF230
5
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1.25
1.05
0.85
0
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
1.15
0.95
0.75
-40
40
80
120
B
I
D
= 250
μ
A
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
2000
1600
1200
800
400
0
C
ISS
C
OSS
C
RSS
0
20
30
10
40
50
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
I
D
, DRAIN CURRENT (A)
4
8
10
0
2
10
4
6
0
2
g
f
,
80
μ
s PULSE TEST
8
6
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 150
o
C
T
J
= 25
o
C
I
S
,
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
10
2
10
1.0
0
1
2
3
4
T
J
= 25
o
C
T
J
= 150
o
C
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
8
16
24
32
0
20
15
0
10
V
G
,
5
I
D
= 5.5A
40
V
DS
= 40V
V
DS
= 100V
V
DS
= 60V
IRFF230
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