參數資料
型號: IRFF210
廠商: International Rectifier
英文描述: REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
中文描述: 重復性雪崩和DV /受好評的HEXFET剖三極管通孔dt(下至205AF)
文件頁數: 5/7頁
文件大?。?/td> 325K
代理商: IRFF210
5
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
(Continued)
1.25
1.05
0.85
0
160
-40
T
J
, JUNCTION TEMPERATURE (
o
C)
N
1.15
0.95
0.75
40
80
120
B
I
D
= 250
μ
A
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
500
400
300
200
100
0
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
C
ISS
C
OSS
C
RSS
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
1
2
3
4
0
5
4.0
3.2
2.4
0
1.6
g
f
,
80
μ
s PULSE TEST
0.8
T
J
= 125
o
C
T
J
= 25
o
C
3.6
2.8
2.0
1.2
0.4
T
J
= -55
o
C
I
S
,
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
10
1
0.1
0
1
2
3
4
5
T
J
= 150
o
C
T
J
= 25
o
C
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
2
4
6
8
0
10
20
15
0
10
V
G
,
V
DS
= 40V
V
DS
= 100V
5
I
D
= 2.2A
V
DS
= 160V
IRFF210
相關PDF資料
PDF描述
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IRFF310 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET(1.35A, 400V, 3.600 Ω, N溝道功率MOS場效應管)
IRFF310 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
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