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參數(shù)資料
| 型號： | IRFD9120 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET(1.0A, 100V, 0.6 Ω, P溝道功率MOS場效應(yīng)管) |
| 中文描述： | Si, SMALL SIGNAL, FET |
| 封裝： | HEXDIP-4 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 52K |
| 代理商： | IRFD9120 |
4-48
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
μ
s pulse is minimal.
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0
-1
0
-1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-2
-3
-5
-2
-3
I
D
,
-4
-4
-5
V
GS
= -7V
V
GS
= -10V
V
GS
= -9V
V
GS
= -4V
V
GS
= -5V
V
GS
= -6V
V
GS
= -8V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
-5
-4
-3
-2
-1
0
-2
-3
V
GS
, GATE TO SOURCE VOLTAGE (V)
-4
-5
-6
-7
V
DS
≥
I
D(ON)
x r
DS(ON)
MAX.
I
D
,
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
I
D
, DRAIN CURRENT (A)
r
D
,
1.6
1.2
0.8
0.4
0
0
-2
-4
-6
-8
V
GS
= -20V
GS
= -10V
O
N
2.2
1.4
1.0
0.6
0.2
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
1.8
80
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
V
GS
= -10V, I
D
= -8A
1.25
0.95
0.85
0.75
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
80
120
1.05
1.15
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
500
100
00
-20
-50
C
300
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
400
200
C
ISS
C
OSS
C
RSS
-10
-30
-40
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
V
GS
= 0V, f = 1MHz
IRFD9120
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| IRFD9210 | 功能描述:MOSFET P-Chan 200V 0.4 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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