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參數(shù)資料
| 型號： | IRFBL3703 |
| 廠商： | International Rectifier |
| 英文描述： | Synchronous Rectification in High Power High Frequency DC/DC Converters |
| 中文描述： | 同步整流的大功率高頻直流/直流轉(zhuǎn)換器 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 103K |
| 代理商： | IRFBL3703 |
IRFBL3703
2
www.irf.com
Parameter
Min. Typ. Max. Units
30
–––
Conditions
V
GS
= 0V, I
D
= 250μA
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– 0.028 ––– V/°C Reference to 25°C, I
D
= 1mA
–––
–––
V
GS(th)
Gate Threshold Voltage
2.0
–––
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Dynamic @ T
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
–––
V
2.0
2.5
–––
–––
–––
–––
–––
2.5
3.6
4.0
20
250
200
-200
V
GS
= 10V, I
D
= 76A
V
GS
= 7.0V, I
D
= 76A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
V
μA
nA
Parameter
Min. Typ. Max. Units
150
–––
–––
209
–––
62
–––
42
–––
18
–––
123
–––
53
–––
24
–––
8250 –––
–––
3000 –––
–––
290
–––
10360 –––
–––
3060 –––
–––
2590 –––
Conditions
V
DS
= 24V, I
D
= 76A
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Avalanche Characteristics
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
––– I
D
= 76A
–––
nC
–––
–––
–––
–––
–––
S
V
DS
= 24V
V
GS
= 10V,
V
DD
= 15V, V
GS
= 10V
I
D
= 76A
R
G
= 1.8
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 24V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 24V
–––
pF
ns
Parameter
Typ.
–––
–––
–––
Max.
1700
76
30
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Thermal Resistance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 76A, V
GS
= 0V
T
J
= 25°C, I
F
= 76A, V
DS
= 16V
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
–––
–––
–––
0.8
80
185
1.3
120
275
V
ns
nC
Diode Characteristics
260
1000
A
Static @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
m
Parameter
Typ.
–––
–––
Max.
0.5
40
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
°C/W
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